SWF4N65 datasheet(1/5 Pages) DOINGTER

Nome de Peças	SWF4N65

Descrição Electrónicos	N-Channel MOSFET uses advanced trench technology

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Fabricante Electrônico	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

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Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=650V,ID=5A,RDS(ON)<2.7Ω@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra Iow RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

650

V

VGS

Gate-Source Voltage

±30

V

ID

Continuous Drain Current-

TC=25℃

5

A

Continuous Drain Current-TC=100℃

2.5

Pulsed Drain Current

1

16

EAS

Single Pulse Avalanche Energy

2

80

mJ

PD

Power Dissipation

24.5

W

IAR

5

A

EAR

4.5

MJ

Dv/dt

5

TJ, TSTG

Operating and Storage Junction Temperature Range

-55-+150

℃

Thermal Characteristics：

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/

1

3

G D

S

SWF4N65

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