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10N60L-TF3-T Folha de dados(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Nome de Peças 10N60L-TF3-T
Descrição Electrónicos  N-Channel MOSFET uses advanced trench technology
PDF  5 Pages
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Fabricante Electrônico  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Página de início  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

10N60L-TF3-T Folha de dados(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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—
2 —
Symbol
Parameter
Max
Units
RƟJC
Thermal Resistance,Junction to Case
℃/W
RƟJA
Thermal Resistance,Junction to Ambient
Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
650
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=650V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±30V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
2
---
4
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=5A
---
Ω
GFS
Forward Transconductance
VDS=40V, ID=4A
---
11
---
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
---
pF
Coss
Output Capacitance
---
---
Crss
Reverse Transfer Capacitance
---
---
Switching Characteristics
td(on)
Turn-On Delay Time
VDD=325V, ID=10A,
RGEN=25Ω.
---
---
ns
tr
Rise Time
---
---
ns
td(off)
Turn-Off Delay Time
---
---
ns
tf
Fall Time
---
---
ns
Qg
Total Gate Charge
VGS=10V, VDS=520V,
ID=10A
---
---
nC
Qgs
Gate-Source
Charge
---
---
nC
---
4.63
45.5
0.63
0.78
1189
161
3.6
14
29
61
36
24
6.2
10N60L-TF3-T



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