10N60L-TF3-T datasheet(3/5 Pages) DOINGTER

Nome de Peças	10N60L-TF3-T

Descrição Electrónicos	N-Channel MOSFET uses advanced trench technology

PDF	5 Pages

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Fabricante Electrônico	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

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Qgd

Gate-Drain “Miller” Charge

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Drain-Source Diode Characteristics

VSD

Source-Drain Diode Forward Voltage

VGS=0V,IS=10A

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1.2

Diode Forward Current

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ISM

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Trr

Reverse Recovery Time

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Qrr

Reverse Recovery Charge

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Notes:

Typical Characteristics： (T

C=25℃ unless otherwise noted)

GS = 0 V, IS = 10 A,

F / dt = 100 A/μs

Max. Pulsed Forwar d Cur rent

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 10 mH, IAS = 8 A, VDD = 50V, RG = 25

Ω, Starting TJ = 25°C

3. ISD≤4A, di/dt ≤200A/us, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

8.1

460

3.0

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10N60L-TF3-T

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