RA4M1 datasheet(82/130 Pages) RENESAS

Nome de Peças	RA4M1

Descrição Electrónicos	High efficiency 48-MHz Arm Cortex-M4 core, 256-KB code flash memory

PDF	130 Pages

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Fabricante Electrônico	RENESAS [Renesas Technology Corp]

Página de início	http://www.renesas.com

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R01DS0355EJ0100 Rev.1.00

Page 82 of 130

Oct 8, 2019

RA4M1 Group

2. Electrical Characteristics

2.3.11

SSIE Timing

Figure 2.60

SSIE clock input/output timing

Table 2.38

SSIE timing

Conditions: VCC = 1.6 to 5.5 V

Parameter

Symbol

Min

Max

Unit

Test conditions

SSIE

AUDIO_CLK input

frequency

2.7 V or above

tAUDIO

-25

MHz

1.6 V or above

Output clock period

250

Figure 2.60

Input clock period

250

Clock high pulse

width

1.8 V or above

tHC

100

1.6 V or above

200

Clock low pulse

width

1.8 V or above

tLC

100

1.6 V or above

200

Clock rise time

tRC

-25

Data delay

2.7 V or above

tDTR

-65

Figure 2.61,

Figure 2.62

1.8 V or above

105

1.6 V or above

140

Set-up time

2.7 V or above

tSR

1.8 V or above

1.6 V or above

140

Hold time

tHTR

SSITXD0 output

delay from

SSILRCK0/SSIFS0

change time

1.8 V or above

TDTRW

105

Figure 2.63

1.6 V or above

140

SSIBCK0

tHC

tLC

tRC

tI, tO

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