12N50C3 datasheet(2/8 Pages) VBSEMI

2 / 8 page

Notes

a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.

b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-62

°C/W

Maximum Junction-to-Case (Drain)

RthJC

-0.5

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

650

VDS Temperature Coefficient

V

DS/TJ

Reference to 25 °C, ID = 1 mA

-0.67

V/°C

Gate-Source Threshold Voltage (N)

VGS(th)

VDS = VGS, ID = 250 μA

2.5

Gate-Source Leakage

IGSS

VGS = ± 20 V

± 100

VGS = ± 30 V

± 1

μA

Zero Gate Voltage Drain Current

IDSS

VDS =650 V, VGS = 0 V

μA

VDS = 520 V, VGS = 0 V, TJ = 125 °C

500

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 11 A

0.3



Forward Transconductance

gfs

VDS = 30 V, ID = 11 A

7.0

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 100 V,

f = 1 MHz

4826

Output Capacitance

Coss

456

Reverse Transfer Capacitance

Crss

Effective Output Capacitance, Energy

Related a

Co(er)

VDS = 0 V to 520 V, VGS = 0 V

-84

Effective Output Capacitance, Time

Related b

Co(tr)

293

Total Gate Charge

VGS = 10 V

ID = 11 A, VDS = 520 V

-71

Gate-Source Charge

Qgs

-14

Gate-Drain Charge

Qgd

-33

Turn-On Delay Time

td(on)

VDD = 520 V, ID = 11 A,

VGS = 10 V, Rg = 9.1 

-22

Rise Time

-34

Turn-Off Delay Time

td(off)

-68

Fall Time

-42

Gate Input Resistance

f = 1 MHz, open drain

0.78



Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the



integral reverse



p - n junction diode

Pulsed Diode Forward Current

ISM

Diode Forward Voltage

VSD

TJ = 25 °C, IS = 11 A, VGS = 0 V

0.9

1.2

Reverse Recovery Time

trr

TJ = 25 °C, IF = IS = 11 A,

dI/dt = 100 A/μs, VR = 25 V

160

Reverse Recovery Charge

Qrr

-1.2

μC

Reverse Recovery Current

IRRM

-14

210

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