12N50C3 datasheet(1/8 Pages) VBSEMI

Nome de Peças	12N50C3

Descrição Electrónicos	N-Channel 650 V (D-S) MOSFET

PDF	8 Pages

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Fabricante Electrônico	VBSEMI [VBsemi Electronics Co.,Ltd]

Página de início	www.VBsemi.com

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FEATURES

• Reduced trr, Qrr, and IRRM

• Low figure-of-merit (FOM) Ron x Qg

• Low input capacitance (Ciss)

• Low switching losses due to reduced Qrr

• Ultra low gate charge (Qg)

• Avalanche energy rated (UIS)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 5.1 A.

c. 1.6 mm from case.

d. ISD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C.

PRODUCT SUMMARY

VDS (V) at TJ max.

650

RDS(on) max. () at 25 °C

VGS = 10 V

0.3

Qg max. (nC)

106

Qgs (nC)

14

Qgd (nC)

33

Configuration

Single

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

650

V

Gate-Source Voltage

VGS

± 30

Continuous Drain Current (TJ = 150 °C)

VGS at 10 V

TC = 25 °C

ID

1

A

TC = 100 °C

16

Pulsed Drain Current a

IDM

53

Linear Derating Factor

1.7

W/°C

Single Pulse Avalanche Energy b

EAS

367

mJ

Maximum Power Dissipation

PD

208

W

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to +150

°C

Drain-Source Voltage Slope

TJ = 125 °C

dV/dt

37

V/ns

Reverse Diode dV/dt d

31

Soldering Recommendations (Peak Temperature) c

for 10 s

300

°C

N-Channel

650 V (D-S) MOSFET

8

TO-220AB

GD S

4

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