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MJE520 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças MJE520
Descrição Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJE520 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
MJE520
DESCRIPTION
·
High Collector Current-IC= 3.0A
·
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 30V(Min)
·
Good Linearity of hFE
·
Low Saturation Voltage
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
3
A
ICP
Collector Current-Pulse
7
A
PC
Collector Power Dissipation
@ TC=25℃
25
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃


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