MJE520 datasheet(2/2 Pages) ISC

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isc Silicon NPN Power Transistor

MJE520

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 100μA ; IE= 0

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 100mA

V(BR)EBO

Emitter-Base Breakdown Vltage

IE= 100μA ; IC= 0

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 500mA; IB= 50mA

0.5

ICBO

Collector Cutoff Current

VCB= 50V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 4V; IC= 0

hFE-1

DC Current Gain

IC= 1 A ; VCE= 1 V

Current-Gain—Bandwidth Product

IC= 50mA ; VCE= 10V

MHz

COB

Output Capacitance

IE= 0; VCB= 10V,ftest= 1MHz

NOTICE：

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of

our products.

ISC products are intended for usage in general electronic equipment. The products are not

designed for use in equipment which require specialized quality and/or reliability, or in equipment

which could have applications in hazardous environments, aerospace industry, or medical

field. Please contact us if you intend our products to be used in these special applications.

ISC makes no warranty or guarantee regarding the suitability of its products for any particular

purpose, nor does ISC assume any liability arising from the application or use of any products, and

specifically disclaims any and all liability, including without limitation special, consequential or

incidental damages.

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