GA200NS61U datasheet(1/9 Pages) IRF

Nome de Peças	GA200NS61U

Descrição Electrónicos	High Side Switch Chopper Module Ultra-Fast Speed IGBT

PDF	9 Pages

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Fabricante Electrônico	IRF [International Rectifier]

Página de início	http://www.irf.com

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1 / 9 page

11/06/01

GA200NS61U

IGBT INT-A-PAK

Features

VCES = 600V

VCE(on) typ. = 1.8V

@VGE = 15V, IC = 200A

Parameter

Typ.

Max.

Units

RθJC

Thermal Resistance, Junction-to-Case - IGBT

—

0.20

RθJC

Thermal Resistance, Junction-to-Case - Diode

—

0.35

°C/W

RθCS

Thermal Resistance, Case-to-Sink - Module

0.1

—

Mounting Torque, Case-to-Heatsink

—

4.0

N m

Mounting Torque, Case-to-Terminal 1, 2 & 3

—

3.0

Weight of Module

200

—

g

Thermal / Mechanical Characteristics

High Side Switch Chopper Module

Ultra-FastTM Speed IGBT

Absolute Maximum Ratings

Parameter

Max.

Units

VCES

Collector-to-Emitter Voltage

600

V

IC @ TC = 25°C

Continuous Collector Current

200

ICM

Pulsed Collector Current

400

A

ILM

Peak Switching Curren

t

400

IFM

Peak Diode Forward Current

400

VGE

Gate-to-Emitter Voltage

±20

V

VISOL

RMS Isolation Voltage, Any Terminal To Case, t = 1 min

2500

PD @ TC = 25°C

Maximum Power Dissipation

625

W

PD @ TC = 85°C

Maximum Power Dissipation

325

TJ

Operating Junction Temperature Range

-40 to +150

°C

TSTG

Storage Temperature Range

-40 to +125

• UltraFast: Optimized for high operating

frequencies 8-40 kHz in hard switching, >200

kHz in resonant mode

• Very low conduction and switching losses

• HEXFRED™ antiparallel diodes with ultra- soft

recovery

• Industry standard package

• UL approved

Benefits

• Increased operating efficiency

• Direct mounting to heatsink

• Performance optimized for power conversion: UPS,

SMPS, Welding

• Lower EMI, requires less snubbing

• Generation 4 IGBT technology

.

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Nº de peça semelhante - GA200NS61U

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Microsemi Corporation	GA200	140Kb / 3P	SCRs Nanosecond Switching, Planar
Digitron Semiconductors	GA200	173Kb / 4P	SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR
Microsemi Corporation	GA200A	140Kb / 3P	SCRs Nanosecond Switching, Planar
Digitron Semiconductors	GA200A	173Kb / 4P	SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR
International Rectifier	GA200HS60S	101Kb / 6P	HALF-BRIDGE IGBT INT-A-PAK

More results

Descrição semelhante - GA200NS61U

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Powerex Power Semicondu...	QIQ0645001	74Kb / 3P	Low side Chopper IGBT Module 600V 450A IGBT / 600V 450A Fast Diode
	QIQ0645002	77Kb / 2P	Low side Chopper IGBT Module 600V 450A IGBT / 600V 450A Fast Diode
	QIQ1245001	234Kb / 2P	Low side Chopper IGBT Module 1200V 450A IGBT / 1200V 750A Fast Diode
Dynex Semiconductor	GP800DCS18	193Kb / 10P	Chopper Switch IGBT Module
International Rectifier	GA150KS61U	164Kb / 9P	Low Side Switch Chopper Module Ultra-Fast Speed IGBT
	IRGMIC50U	320Kb / 2P	Ultra Fast Speed IGBT
	IRG4PH40UPBF	619Kb / 9P	Ultra Fast Speed IGBT
Powerex Power Semicondu...	QIQ0630003	93Kb / 2P	Low side Chopper IGBT Module
International Rectifier	IRG4PH50UPBF	628Kb / 9P	Ultra Fast Speed IGBT
Inchange Semiconductor ...	IRG4PH50U	358Kb / 3P	Ultra Fast Speed IGBT

More results

GA200NS61U Folha de dados(PDF) 1 Page - International Rectifier

GA200NS61U Folha de dados(HTML) 1 Page - International Rectifier

Nº de peça semelhante - GA200NS61U

Descrição semelhante - GA200NS61U

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