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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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GA200NS61U Folha de dados(PDF) 2 Page - International Rectifier |
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GA200NS61U Folha de dados(HTML) 2 Page - International Rectifier |
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2 / 9 page  GA200NS61U 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 903 1355 VCC = 400V, VGE = 15V Qge Gate - Emitter Charge (turn-on) — 125 188 nC IC = 135A Qgc Gate - Collector Charge (turn-on) — 306 459 TJ = 25°C td(on) Turn-On Delay Time — 342 — RG1 = 27Ω, RG2 = 0Ω, tr Rise Time — 194 — ns IC = 200A td(off) Turn-Off Delay Time — 366 — VCC = 360V tf Fall Time — 213 — VGE = ±15V Eon Turn-On Switching Energy — 12 — mJ Inductive load Eoff (1) Turn-Off Switching Energy — 16 — Ets (1) Total Switching Energy — 28 39 Cies Input Capacitance — 20068 — VGE = 0V Coes Output Capacitance — 1254 — pF VCC = 30V Cres Reverse Transfer Capacitance — 261 —ƒ = 1 MHz trr Diode Reverse Recovery Time — 137 — ns IC = 200A Irr Diode Peak ReverseCurrent — 96 — ARG1 = 27Ω Qrr Diode Recovery Charge — 6731 — µC RG2 = 0Ω di(rec)M/dt Diode Peak Rate of Fall of Recovery — 5705 — A/µs VCC = 360V During tb di/dt =1227A/µs Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 —— VGE = 0V, IC = 1mA VCE(on) Collector-to-Emitter Voltage — 1.8 2.2 VGE = 15V, IC = 200A — 1.9 — VVGE = 15V, IC = 200A, TJ = 125°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 IC = 1.25mA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°CVCE = VGE, IC = 1.25mA gfe Forward Transconductance — 175 — SVCE = 25V, IC = 200A ICES Collector-to-Emitter Leaking Current —— 1.0 mA VGE = 0V, VCE = 600V —— 10 VGE = 0V, VCE = 600V, TJ = 125°C VFM Diode Forward Voltage - Maximum — 1.6 2.2 V IF = 200A, VGE = 0V — 1.7 — IF = 200A, VGE = 0V, TJ = 125°C IGES Gate-to-Emitter Leakage Current —— 250 nA VGE = ±20V Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) |
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