IXFN55N50 datasheet(1/4 Pages) IXYS

Nome de Peças	IXFN55N50

Descrição Electrónicos	HiPerFET Power MOSFET

PDF	4 Pages

Scroll/Zoom	100%

Fabricante Electrônico	IXYS [IXYS Corporation]

Página de início	http://www.ixys.com

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1 / 4 page

S

G

S

D

miniBLOC, SOT-227 B (IXFN)

E153432

TO-264 AA (IXFK)

Features

• International standard packages

• Encapsulating epoxy meets

UL 94 V-0, flammability classification

• miniBLOC with Aluminium nitride

isolation

• Low R

DS (on) HDMOS

TM

process

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• Temperature and lighting controls

Advantages

• Easy to mount

• Space savings

• High power density

G = Gate

D

= Drain

S = Source

TAB = Drain

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

S

G

D

D (TAB)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

V

DSS

V

GS = 0 V, ID = 1mA

500

V

GS(th)

V

DS = VGS, ID = 8mA

2.5

4.5

V

I

GSS

V

GS = ±20V; VDS = 0V

±200

nA

I

DSS

V

DS = VDSS

T

J =

25

°C25

µA

V

GS = 0 V

T

J = 125°C2

mA

R

DS(on)

V

GS = 10 V, ID = 0.5 • ID25

55N50

80

m

Ω

Note 1

50N50

100

m

Ω

97502F (04/02)

HiPerFETTM

Power MOSFET

Single Die MOSFET

Symbol

Test Conditions

Maximum Ratings

IXFK

IXFN

55N50

50N50

55N50

50N50

V

DSS

T

J

= 25°C to 150°C

500

V

DGR

T

J

= 25°C to 150°C

500

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C

55

50

55

50 A

I

DM

T

C =25°C,

220

200

220

200 A

I

AR

T

C = 25°C

55

50

55

50 A

E

AR

T

C = 25°C60

60

mJ

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS

5

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C = 25°C

560

600

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in) from case for 10 s

300

N/A

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

N/A

2500

V~

I

ISOL ≤ 1 mA

t = 1 s

N/A

3000

V~

M

d

Mounting torque

0.9/6

1.5/13 Nm/lb.in.

Terminal connection torque

N/A

1.5/13 Nm/lb.in.

Weight

10

30

g

V

DSS

I

D25

R

DS(on)

t

rr

IXFN 55N50

500V

55A

80m

Ω 250ns

IXFN 50N50

500V

50A

100m

Ω 250ns

IXFK 55N50

500V

55A

80m

Ω 250ns

IXFK 50N50

500V

50A

100m

Ω 250ns

Preliminary data sheet

Nº de peça semelhante - IXFN55N50

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
IXYS Corporation	IXFN55N50	106Kb / 2P	HiPerRF Power MOSFETs
IXYS Corporation	IXFN55N50	577Kb / 4P	HiPerFET Power MOSFET
Inchange Semiconductor ...	IXFN55N50	599Kb / 3P	N-Channel MOSFET Transistor
IXYS Corporation	IXFN55N50F	106Kb / 2P	HiPerRF Power MOSFETs

More results

Descrição semelhante - IXFN55N50

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
IXYS Corporation	IXFN170N10	145Kb / 4P	HiPerFET Power MOSFET
	IXFN150N15	70Kb / 2P	HiPerFET Power MOSFET
	IXFH22N55	69Kb / 4P	HiPerFET Power MOSFET
	IXFN72N55Q2	560Kb / 4P	HiPerFET Power MOSFET
	IXFK32N60	192Kb / 4P	HiPerFET Power MOSFET
	IXFN43N60	82Kb / 2P	HiPerFET Power MOSFET
	FMK75-01F	72Kb / 2P	HiPerFET Power MOSFET
	IXFN24N100	113Kb / 4P	HiPerFET Power MOSFET
	IXFN150N10	74Kb / 2P	HiPerFET Power MOSFET
	IXFF24N100	182Kb / 4P	HiPerFET Power MOSFET

More results

IXFN55N50 Folha de dados(PDF) 1 Page - IXYS Corporation

IXFN55N50 Folha de dados(HTML) 1 Page - IXYS Corporation

Nº de peça semelhante - IXFN55N50

Descrição semelhante - IXFN55N50

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