IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

Figure 7. Gate Charge

Figure 8. Capacitance Curves

Figure 9.

Forward Voltage Drop of the

Intrinsic Diode

Figure 10. Transient Thermal Resistance

IXFK50N50

IXFK55N50

IXFN50N50

IXFN55N50

Gate Charge - nC

0

50

100

150

200

250

300

350

0

2

4

6

8

10

12

V

I

V

0

5

10

15

20

25

30

35

40

100

1000

10000

Crss

Coss

Ciss

f = 1MHz

V

0.2

0.4

0.6

0.8

1.0

0

20

40

60

80

100

T

T

Pulse Width - Seconds

0.00

0.01

0.10

1.00