PI5B3BA datasheet(2/4 Pages) NIKOSEM

2 / 4 page

REV 1.0

G-35-3

P-Channel Enhancement Mode

Field Effect Transistor

PI5B3BA

TO-251

Halogen-Free & Lead-Free

NIKO-SEM

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = -250A

-40

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250A

-1

-1.7

-3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±25V

±100 nA

Zero Gate Voltage Drain Current

IDSS

VDS = -32V, VGS = 0V

-1

A

VDS = -30V, VGS = 0V, TJ = 125 °C

-10

Drain-Source On-State

Resistance

RDS(ON)

VGS = -4.5V, ID = -15A

8.7

mΩ

VGS = -10V, ID = -20A

6.4

Forward Transconductance

gfs

VDS = -5V, ID = -20A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = -20V, f = 1MHz

3930

Output Capacitance

Coss

507

Reverse Transfer Capacitance

Crss

409

Gate Resistance

VGS =0V, VDS = 0V, f = 1MHz

3.3

Total Gate Charge

Qg (VGS=-10V)

VDS = -20V , VGS = -10V,

ID = -20A

Qg(VGS=-4.5V)

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDS = -20V ,

ID  -20A, VGS = -10V, RGEN =6Ω

Rise Time

Turn-Off Delay Time

td(off)

173

Fall Time

122

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

-51

Forward Voltage

VSD

IF = -20A, VGS = 0V

-1.3

Reverse Recovery Time

trr

IF = -20A, dlF/dt = 100A / S

Reverse Recovery Charge

Qrr

1Pulse test : Pulse Width  300 sec, Duty Cycle  2%.

2Independent of operating temperature.

3Package limitation current is -55A.

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