PI5B3BA datasheet(1/4 Pages) NIKOSEM

Nome de Peças	PI5B3BA

Descrição Electrónicos	P-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Fabricante Electrônico	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Página de início	http://www.niko-sem.com

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REV 1.0

1

G-35-3

P-Channel Enhancement Mode

Field Effect Transistor

PI5B3BA

TO-251

Halogen-Free & Lead-Free

NIKO-SEM

G

S

D

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low RDS(on) to Minimize Conduction Losses.

• Ohmic Region Good RDS(on) Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

Applications

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

-40

V

Gate-Source Voltage

VGS

±25

V

Continuous Drain Current

2

TC = 25 °C

ID

-74

A

TC = 100 °C

-46

Pulsed Drain Current

1

IDM

-150

Avalanche Current

IAS

-48.9

Avalanche Energy

L = 0.1mH

EAS

120

mJ

Power Dissipation

TC = 25 °C

PD

83

W

TC = 100 °C

33

Junction & Storage Temperature Range

TJ, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Case

RJC

1.5

°C / W

Junction-to-Ambient

RJA

62.5

1Pulse width limited by maximum junction temperature.

2Package limitation current is -55A.

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

-40V

8mΩ

-74A

1. GATE

2. DRAIN

3. SOURCE

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PI5B3BA Folha de dados(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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