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E00924A1Y-PS

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any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

CXG1109EN

16 pin VSON (Plastic)

LO IN

1

3

6

8

9

16

CAP

GND

CTL

GND

GND

LO IN

CAP

GND

OPT

GND

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

Receive Dual Low Noise Amplifier/Mixer

Description

The CXG1109EN is a receive dual low noise amplifier/

mixer MMIC. This IC is designed using the Sony’s

GaAs J-FET process.

Features

• High conversion gain: Gp = 16.5 to 17dB (LNA Typ.)

Gc = 9.5 to 10dB (MIX Typ.)

• Low noise figure:

NF = 1.5dB (LNA Typ.)

NF = 4 to 5dB (MIX Typ.)

• Single 3V power supply operation

• Single CTL pin achieved by the built-in inverter

circuit

• 16-pin VSON package

Applications

800MHz Japan digital cellular telephones (PDC)

Structure

GaAs J-FET MMIC

Block Diagram

Absolute Maximum Ratings (Ta = 25°C)

• Supply voltage

4.5

V

• Input power

+13

dBm

• Current consumption

15

mA

• Operating temperature Topr

–35 to +85

°C

• Storage temperature

Tstg

–65 to +150

°C

Recommended Operating Voltages

• Supply voltage

2.7 to 3.3

V

• Control voltage

V

0 to 0.3

V

Pin Configuration

GaAs MMICs are ESD sensitive devices. Special handling precautions are required.