BAS116 datasheet(2/4 Pages) DIODES

2 / 4 page

BAS116

Document number: DS30233 Rev. 11 - 2

2 of 4

www.diodes.com

May 2018

BAS116

Maximum Ratings (@TA = 25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

RMS Reverse Voltage

VR(RMS)

Forward Continuous Current (Note 5)

IFM

215

Repetitive Peak Forward Current

IFRM

500

Non-Repetitive Peak Forward Surge Current

@ t = 1.0µs

@ t = 1.0ms

@ t = 1.0s

IFSM

4.0

1.0

0.5

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5) @TA = 25°C

250

Thermal Resistance Junction to Ambient Air (Note 5) @TA = 25°C

RJA

500

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-65 to +150

°C

Electrical Characteristics (@TA = 25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 6)

V(BR)R



IR = 100µA

Forward Voltage



0.90

1.0

1.1

1.25

IF = 1.0mA

IF = 10mA

IF = 50mA

IF = 150mA

Leakage Current (Note 6)



5.0

VR = 75V

VR = 75V, Tj = 150C

Total Capacitance



VR = 0, f = 1.0MHz

Reverse Recovery Time

trr



3.0

µs

IF = IR = 10mA,

Irr = 0.1 x IR, RL = 100Ω

Notes:

5. Part mounted on FR-4, 2oz 1inch squared copper pad PC board.

6. Short duration pulse test used to minimize self-heating effect.

100

125

150

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Power Derating Curve

150

200

250

300

= 500°C/W

JA

Note 4

100

150

200

300

200

250

100

150

T , AMBIENT TEMPERATURE ( C)

Fig. 2 Current Derating Curve

Note 5

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