HAT2218R pdf, HAT2218R Descrição Electrónicos, HAT2218R Folha de dados, HAT2218R view ::: ALLDATASHEET :::

Nome de Peças	HAT2218R

Descrição Electrónicos	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

Tamanho do Arquivo	139.35 Kbytes

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Fabricante Electrônico	RENESAS [Renesas Technology Corp]

Página de início	http://www.renesas.com

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Nº de peça semelhante - HAT2218R

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
SHENZHEN DOINGTER SEMIC...	HAT2218R	1Mb / 4P	Dual N-Channel MOSFET uses advanced trench technology

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Renesas Technology Corp	RJK0383DPA	114Kb / 5P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	RJK0389DPA	113Kb / 5P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	HAT2285WP	130Kb / 10P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	HAT2210R	116Kb / 12P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	HAT2126RP	263Kb / 17P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	RJK0389DPA	358Kb / 11P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	RJK0214DPA	260Kb / 11P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	RJK0215DPA	271Kb / 11P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	RJK0230DPA	221Kb / 11P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	RJK0223DNS	81Kb / 5P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching