SCTW40N120G2VAG pdf, SCTW40N120G2VAG Descrição Electrónicos, SCTW40N120G2VAG Folha de dados, SCTW40N120G2VAG view ::: ALLDATASHEET :::

Nome de Peças	SCTW40N120G2VAG

Descrição Electrónicos	Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mΩ (typ., TJ = 25 °C) in an HiP247 package

Tamanho do Arquivo	210.0 Kbytes

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

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Nº de peça semelhante - SCTW40N120G2VAG

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	SCTW40N120G2V	205Kb / 12P	Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 package 09-Jun-2021

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	SCTW100N65G2AG	423Kb / 11P	Automotive-grade silicon carbide Power MOSFET 650 V, 100 A,20 mΩ (typ., TJ=25 °C), in an HiP247™ package 21-Nov-2018
	SCTW100N120G2AG	217Kb / 11P	Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package 23-Jul-2020
	SCTW35N65G2VAG	206Kb / 12P	Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package 09-Sep-2020
	SCTW60N120G2AG	197Kb / 11P	Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package 18-May-2020
	SCTWA35N65G2VAG	243Kb / 12P	Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 long leads package 11-Aug-2020
	SCTWA40N120G2AG	257Kb / 12P	Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package 22-Nov-2021
	SCT10N120AG	238Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package 21-Sep-2022
	SCTH100N120G2-AG	439Kb / 14P	Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package 23-Jul-2020