PXAE213708NB-V1-R2 pdf, PXAE213708NB-V1-R2 Descrição Electrónicos, PXAE213708NB-V1-R2 Folha de dados, PXAE213708NB-V1-R2 view ::: ALLDATASHEET :::

Nome de Peças	PXAE213708NB-V1-R2

Descrição Electrónicos	Thermally-Enhanced High Power RF LDMOS FET 400 W, 29 V, 2110 ??2180 MHz

Tamanho do Arquivo	529.64 Kbytes

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Fabricante Electrônico	CREE [Cree, Inc]

Página de início	http://www.cree.com/

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Nº de peça semelhante - PXAE213708NB-V1-R2

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
WOLFSPEED, INC.	PXAE213708NB-V1-R2	707Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 2110 – 2200 MHz Rev. 04, 2022-12-20

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Infineon Technologies A...	PTFA210701E	387Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 ??2170 MHz Rev. 02.1, 2009-02-18
	PTFA210301E	198Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz Rev. 03, 2008-03-04
	PTFA211001E	223Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110-2170 MHz Rev. 03, 2008-03-04
	PTFA211801E	583Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz Rev. 06, 2011-01-11
	PTFA212002E	227Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110-2170 MHz Rev. 02, 2005-05-16
	PXFC211507SC	201Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 ??2170 MHz Rev. 02, 2015-03-03
	PTFB212507SH	193Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 ??2170 MHz Rev. 03, 2015-10-30
Cree, Inc	PTFB211503FL	578Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 2110 ??2170 MHz
Cree, Inc	PTFB212503FL	553Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 2110 ??2170 MHz
WOLFSPEED, INC.	PXAE213708NB	707Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 2110 – 2200 MHz Rev. 04, 2022-12-20