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PXAE213708NB-V1-R2 Folha de dados (PDF) - Cree, Inc

PXAE213708NB-V1-R2 Datasheet PDF - Cree, Inc
Nome de Peças PXAE213708NB-V1-R2
Download  PXAE213708NB-V1-R2 Download
Tamanho do Arquivo   529.64 Kbytes
página   5 Pages
Fabricante Electrônico  CREE [Cree, Inc]
Página de início  http://www.cree.com/
Logo CREE - Cree, Inc
Descrição Electrónicos Thermally-Enhanced High Power RF LDMOS FET 400 W, 29 V, 2110 ??2180 MHz

PXAE213708NB-V1-R2 Datasheet (PDF)

Go To PDF Page Download Folha de dados
PXAE213708NB-V1-R2 Datasheet PDF - Cree, Inc

Nome de Peças PXAE213708NB-V1-R2
Download  PXAE213708NB-V1-R2 Click to download

Tamanho do Arquivo   529.64 Kbytes
página   5 Pages
Fabricante Electrônico  CREE [Cree, Inc]
Página de início  http://www.cree.com/
Logo CREE - Cree, Inc
Descrição Electrónicos Thermally-Enhanced High Power RF LDMOS FET 400 W, 29 V, 2110 ??2180 MHz

PXAE213708NB-V1-R2 Folha de dados (HTML) - Cree, Inc




Nº de peça semelhante - PXAE213708NB-V1-R2

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
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Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 2110 – 2200 MHz
Rev. 04, 2022-12-20
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Descrição semelhante - PXAE213708NB-V1-R2

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Infineon Technologies A...
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PTFA210301E INFINEON-PTFA210301E Datasheet
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Cree, Inc
PTFB211503FL CREE-PTFB211503FL Datasheet
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Thermally-Enhanced High Power RF LDMOS FET 240 W, 2110 ??2170 MHz
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WOLFSPEED, INC.
PXAE213708NB WOLFSPEED-PXAE213708NB Datasheet
707Kb / 8P
Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 2110 – 2200 MHz
Rev. 04, 2022-12-20
More results




Sobre a Cree, Inc


Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.




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