Low Noise SiGe:C Bipolar RF Transistor

• Highly linear low noise RF transistor
• Provides outstanding performance
   for a wide range of wireless applications
• Based on Infineons reliable high volume
   Silicon Germanium technology
• Ideal for CDMA and WLAN applications
• Collector design provides high linearity of
   14.5 dBm OP1dB for low voltage application
• Maximum stable gain
   Gms = 21.5 dB at 1.8 GHz
   Gma = 11 dB at 6 GHz
• Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz
   Outstanding noise figure NFmin = 1.3 dB at 6 GHz
• Accurate SPICE GP model enables effective
   design in process
• Pb-free (RoHS compliant) and halogen-free package
   with visible leads
• Qualification report according to AEC-Q101 available