Product Brief
The BFP640F is linear very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCE = 4.1 V and currents up to IC = 50 mA. With its high linearity at currents as low as 10 mA (see Fig. 5-8) the device supports energy efficient designs. The typical transition frequency is approximately 40 GHz, hence the device offers high power gain at frequencies up to 8 GHz in amplifier applications. The device is housed in a thin small flat plastic package with visible leads.

Features
• Linear low noise amplifier based on Infineon´s reliable,
   high volume SiGe:C technology
• High linearity OIP3 = 27.5 dBm @ 5.5 GHz, 3 V, 25 mA
• High transition frequency fT = 42 GHz @ 3 V, 30 mA
• NFmin = 0.75 dB @ 3.5 GHz, 3 V, 6 mA
• Maximum power gain Gma = 16.5 dB @ 3.5 GHz, 3 V, 25 mA
• Low power consumption, ideal for mobile applications
• Very common as GPS low noise amplifier, see respective
   application notes on Infineon internet page
• Easy to use Pb-free (RoHS compliant) and halogen-free
   standard package with visible leads
• Qualification report according to AEC-Q101 available

Applications
As Low Noise Amplifier (LNA) in
• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
• Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n/ac, WiMAX 2.5/3.5/5.5 GHz, UWB, Bluetooth
• Multimedia applications such as mobile/portable TV, CATV, FM Radio
• 3G/4G UMTS/LTE mobile phone applications
• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, amplifier in VCOs and buffer amplifier