Designed primarily for wideband large–signal output and driver stages from 30–200 MHz.

N–Channel enhancement mode MOSFET

• Guaranteed performance at 150 MHz, 28 Vdc
   Output power = 45 W
   Power gain = 17 dB (min)
   Efficiency = 60% (min)
• Excellent thermal stability, ideally suited for Class A operation
• Facilitates manual gain control, ALC and modulation techniques
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Low Crss – 8 pF @ VDS = 28 V
• Gold top metal

Typical data for power amplifier applications in industrial, commercial and amateur radio equipment
• Typical performance at 30 MHz, 28 Vdc
   Output power = 30 W (PEP)
   Power gain = 20 dB (typ.)
   Efficiency = 50% (typ.)
   IMD(d3) (30 W PEP) –32 dB (typ.)