The RF MOSFET Line
Power Field Effect Transistor
N–Channel Enhancement–Mode MOSFET

Designed primarily for wideband large–signal output and driver from 30–500 MHz.

• Typical Performance at 400 MHz, 28 Vdc
    Output Power = 4.0 Watts
    Gain = 17 dB
    Efficiency = 50%
• Excellent Thermal Stability, Ideally Suited for Class A Operation
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR
• Low Crss – 0.8 pF Typical at VDS = 28 Volts