Overview
The LC35256D, LC35256DM, and LC35256DT are 32768-word × 8-bit asynchronous silicon gate CMOS static RAMs. These devices use a 6-transistor full CMOS memory cell, and feature low-voltage operation, low current drain, and an ultralow standby current.

Features
• Supply voltage range: 2.7 to 5.5 V
    — 5-V operation: 5.0 V±10%
    — 3-V operation: 2.7 to 3.6 V
• Access times
    — 5-V operation
        LC35256DM, DT-70: 70 ns (max)
        LC35256D, DM, DT-10: 100 ns (max)
    — 3-V operation
        LC35256DM, DT-70: 200 ns (max)
        LC35256D, DM, DT-10: 500 ns (max)
• Standby current
    — 5-V operation: 1.0 µA (Ta ≤ 60°C),
                                 5.0 µA (Ta ≤ 85°C)
    — 3-V operation: 0.8 µA (Ta ≤ 60°C),
                                4.0 µA (Ta ≤ 85°C)
• Operating temperature range: –40 to +85°C
• Data retention supply voltage: 2.0 to 5.5 V
• All I/O levels
    — 5-V operation: TTL compatible
    — 3-V operation: VCC – 0.2 V/0.2 V
• Shared I/O pins and 3-state outputs
• No clock signal required.
• Packages
    — 28-pin DIP (600 mil) plastic package: LC35256D
    — 28-pin SOP (450 mil) plastic package: LC35256DM
    — 28-pin TSOP (8 × 13.4 mm) plastic package: LC35256DT