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STBV18200BY4 Folha de dados (PDF) - Innogration Technologies, Inc.

STBV18200BY4 Datasheet PDF - Innogration Technologies, Inc.
Nome de Peças STBV18200BY4
Download  STBV18200BY4 Download
Tamanho do Arquivo   1638.51 Kbytes
página   6 Pages
Fabricante Electrônico  INNOGRATION [Innogration Technologies, Inc.]
Página de início  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Descrição Electrónicos Gallium Nitride 50V, 200W,1.3-1.8GHz RF Power Transistor

STBV18200BY4 Datasheet (PDF)

Go To PDF Page Download Folha de dados
STBV18200BY4 Datasheet PDF - Innogration Technologies, Inc.

Nome de Peças STBV18200BY4
Download  STBV18200BY4 Click to download

Tamanho do Arquivo   1638.51 Kbytes
página   6 Pages
Fabricante Electrônico  INNOGRATION [Innogration Technologies, Inc.]
Página de início  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Descrição Electrónicos Gallium Nitride 50V, 200W,1.3-1.8GHz RF Power Transistor

STBV18200BY4 Folha de dados (HTML) - Innogration Technologies, Inc.


STBV18200BY4 Detalhes do produto

Description
The STBV18200BY4 is a 200watt Doherty pair capable, GaN HEMT, ideal for for 4G/5G cellular
applications from 1.3 to 1.8GHz..
It can be configured as asymmetrical Doherty delivering 80W average power, according to normal
8dB back off.
There is no guarantee of performance when this part is used outside of stated frequencies.

Applications
 Asymmetrical Doherty amplifier
 L band power amplifier




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