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STBV10500BY4 Folha de dados (PDF) - Innogration Technologies, Inc.
STBV10500BY4 Datasheet PDF - Innogration Technologies, Inc.
Nome de Peças STBV10500BY4
Download  STBV10500BY4 Download
Tamanho do Arquivo   1665.35 Kbytes
página   6 Pages
Fabricante Electrônico  INNOGRATION [Innogration Technologies, Inc.]
Página de início  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Descrição Electrónicos Gallium Nitride 50V, 500W,0.6-1GHz RF Power Transistor

STBV10500BY4 Datasheet (PDF)

Go To PDF Page Download Folha de dados
STBV10500BY4 Datasheet PDF - Innogration Technologies, Inc.

Nome de Peças STBV10500BY4
Download  STBV10500BY4 Click to download

Tamanho do Arquivo   1665.35 Kbytes
página   6 Pages
Fabricante Electrônico  INNOGRATION [Innogration Technologies, Inc.]
Página de início  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Descrição Electrónicos Gallium Nitride 50V, 500W,0.6-1GHz RF Power Transistor

STBV10500BY4 Folha de dados (HTML) - Innogration Technologies, Inc.


STBV10500BY4 Detalhes do produto

Description
The STBV10500BY4 is a 500watt Doherty pair capable, GaN HEMT, ideal for for 4G/5G cellular
applications from 0.6 to 1GHz..
It can be configured as asymmetrical Doherty delivering 80W average power, according to normal
8dB back off.
There is no guarantee of performance when this part is used outside of stated frequencies.

Applications
 Asymmetrical Doherty amplifier within 0.6-1GHz
 UHF TV




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