Description
These N−channel enhancement mode field effect transistors are
produced using onsemi’s proprietary, high cell density, DMOS
technology. These products have been designed to minimize on−state
resistance while providing rugged, reliable, and fast switching
performance. These products are particularly suited for low−voltage,
low−current applications, such as small servo motor control, power
MOSFET gate drivers, and other switching applications.

Features
• High Density Cell Design for Low RDS(on)
• Voltage Controlled Small Signal Switch
• Rugged and Reliable
• High Saturation Current Capability
• ESD Protection Level: HBM > 100 V, CDM > 2 kV
• This Device is Pb−Free and Halogen Free