Description
• N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process.

Features
• High density cell design for low RDS(ON).
• Voltage controlled small signal switching.
• Rugged and reliable.
• High saturation current capability.
• High-speed switcing.
• CMOS logic compatible input.
• Not thermal runaway.
• No secondary breakdown.