Features
▪ Production testing and qualification follow the
standard AS6294/1
▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate
driver
▪ Wide driver bias range of 4.5V to 13.2V
▪ Up to 16.5V logic inputs (regardless of VDD level)
• Inverting and non-inverting inputs
▪ Integrated driver optimized for enhancement-mode
GaN FETs
• Internal 4.5V regulated gate drive voltage
▪ Full military temperature range operation
• TA = -55°C to +125°C
• TJ = -55°C to +150°C
▪ Radiation hardness assurance (lot-by-lot)
• Low dose rate (0.01rad(Si)/s): 75krad(Si)
▪ SEE hardness for Driver (see the SEE test report)
• No SEB/L LETTH, VDD = 16.5V: 86MeV•cm2/mg
• No SET, LETTH, VDD = 13.2V: 86MeV•cm2/mg
▪ SEE hardness for GaN FET (see the SEE test
report)
• No SEB/L LETTH, VDS = 100V: 86MeV•cm2/mg