Features
• Wide operating voltage range of 4.5V to 13.2V
• Up to 14.7V logic inputs (regardless of VDD
level)
○ Inverting and non-inverting inputs
• Optimized to drive enhancement mode GaN
FETs
○ Internal 4.5V regulated gate drive voltage
○ Independent outputs for adjustable
turn-on/turn-off speeds
• NiPdAu-Ag Lead finish (Sn-free, Pb-free)
• Moisture Sensitivity Level (MSL) Rating: 1
• Passes NASA Low Outgassing Specifications
• Full military temperature range operation
○ TA = -55°C to +125°C
○ TJ = -55°C to +150°C
• Characterized radiation levels
○ Low Dose Rate (LDR) <0.01rad(Si)/s: 30krad(Si)
○ No SEB/L, VDD = 16.5V: 43MeV•cm2/mg
Applications
• Flyback and forward converters
• Boost and PFC converters
• Secondary synchronous FET drivers