DESCRIPTION
The TC57H256D is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electrically
programmable read only memory. For read operation, the TC57H256D's access time
is 70ns, and the TC57H256D operates from a single 5-volt power supply and has low
power standby mode which reduces the power dissipation without increasing access time.
The standby mode is achieved by applying a TTL-high level signal to the CE input.
Advanced CMOS technology reduces the maximum active current to 50mA/14.2MHz and stand-
by current to 100μA. For program operation, the programming is achieved by using the
high speed programming mode. For program operation, the programming is achieved by
using high speed programming mode. TC57H256D is fabricated with the CMOS technology.
and the N-channel silicon double layer gate MOS technology.

FEATURES
Peripheral circuit: CMOS
: N-MOS
.
• Memory cell
-70
-85
5V±5% 5V±10%
70ns 85ns
Single 5V power supply
Vcc
TACC
Full static operation
High speed programming mode
Inputs and outputs TTL compatible
Pin compatible with ROM TC53257P, TMM23256P,
TMM27256AD and TC57256AD
Standard 28 pin DIP cerdip package