DESCRIPTION
The TC57256D is a 32,768 word X8 bit CMOS
ultraviolet light erasable and electrically programmable read only memory. For read operation, the
TC57256D's access time is 200ns, and the TC57256D
operates from a single 5-volt power supply and has
low power standby mode which reduces the power
dissipation without increasing access time. The standby mode is achieved by applying a TTL-high level
signal to the CE input. Advanced CMOS technology
reduces the maximum active current to 30 mA/5MHz
and standby current to 100pA.
For program operation, the programming is achieved by using the high speed programming mode.
Program supply voltage is 21 V. The programming of
the TC57256D is accomplished within one and a half
minutes (typ.) TC57256D is fabricated using CMOS
technology and N-channel silicon double layer gate
MOS technology.

FEATURES
• Peripheral circuit: CMOS
Memory cell N-MOS
• Low power dissipation
30mA/5MHZ (active)
100llA (standby)
• Fast access time TC572560-20 200 ns
TC572560-25 250 ns
• Single 5V power supply
• Full static operation
• High speed programming mode
• Inputs and outputs TTL compatible
• Pin compatible with ROMS TC53257P, TMM23256P
- 'and EPROM i27256
• Standard 28 pin DIP cerdip Package