DESCRIPTION
The NE856M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulation distortion. This device offers excellent performance and reliability at low cost through NECs titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip. The NE856M02 is an excellent choice for low noise amplifiers in the VHF to UHF band and is suitable for CATV and other telecommunication applications.

FEATURES
• HIGH COLLECTOR CURRENT:
   100 mA MAX
• NEW HIGH GAIN POWER MINI-MOLD PACKAGE
   (SOT-89 TYPE)
• HIGH OUTPUT POWER AT 1 dB COMPRESSION:
   22 dBm TYP at 1 GHz
• HIGH IP3:
   32 dBm TYP at 1 GHz