10N60L-TF3-T / SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Part No.	10N60L-TF3-T
Manufacturer	DOINGTER
Size	1Mb
Pages	5 pages
Description	N-Channel MOSFET uses advanced trench technology

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# 10N60L-TF3-T N-Channel MOSFET

## Description
Advanced trench technology MOSFET with excellent RDS(on) and low gate charge for a wide range of applications. Green device available.

## Features
️· VDS = 650V, ID = 8A, RDS(ON) = 0.63-0.78Ω @ VGS=10V
️· Low gate charge
️· Advanced trench technology for low RDS(ON)
️· Good heat dissipation

## Absolute Maximum Ratings (TC=25°C unless otherwise noted)
️· VDS: 650V
️· VGS: ±30V
️· ID (TC=25°C): 8A
️· ID (TC=100°C): 4.4A
️· Pulsed ID: 28A
️· EAS: 247mJ
️· PD: 2W
️· IAR: 8A
️· EAR: 18MJ
️· TJ, TSTG: -55°C to +150°C

## Thermal Characteristics
️· RƟJC: 4.63 °C/W
️· RƟJA: 45.5 °C/W

## Electrical Characteristics
️· BVDSS: 650V @ VGS=0V, ID=250μA
️· IDSS: 1μA @ VGS=0V, VDS=650V
️· IGSS: ±100nA @ VGS=±30V, VDS=0V
️· VGS(th): 2-4V @ ID=250μA
️· RDS(ON): 0.63-0.78Ω @ VGS=10V, ID=4A
️· Qg: 24nC @ VGS=10V, VDS=520V, ID=8A

## Drain-Source Diode Characteristics
️· VSD: 1.2V @ VGS=0V, IS=8A
️· Is: 40A (pulsed)

## Typical Characteristics
Refer to figures for:
️· On-Region Characteristics
️· Transfer Characteristics
️· RDS(ON) vs Drain Current and Gate Voltage
️· Body Diode Forward Voltage Variation vs Source Current
️· Capacitance Characteristics
️· Gate Charge Characteristics
️· Breakdown Voltage vs Temperature
️· RDS(ON) vs Temperature
️· Maximum Safe Operating Area vs Case Temperature
️· Maximum Drain Current vs Case Temperature
️· Transient Thermal Response Curve