| Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
STMicroelectronics |
STS15N4LLF5
|
588Kb/12P |
Conduction losses reduced
April 2010 Rev 1 |
Solid State Optronic |
STS100
|
130Kb/4P |
Multifunction Telecommunications Switch
|
Solid State Inc |
STS100
|
596Kb/7P |
Telecom switching
|
JILIN SINO-MICROELECTRO... |
STS10100S
|
409Kb/6P |
TRENCH SCHOTTKY BARRIER DIODE
201807B |
|
STS10100S-RM-A
|
409Kb/6P |
TRENCH SCHOTTKY BARRIER DIODE
201807B |
|
STS10100S-RM-A
|
1Mb/9P |
TRENCH SCHOTTKY BARRIER DIODE
202211D |
|
STS10100S-RM-AR
|
409Kb/6P |
TRENCH SCHOTTKY BARRIER DIODE
201807B |
|
STS10100S-RM-AR
|
1Mb/9P |
TRENCH SCHOTTKY BARRIER DIODE
202211D |
|
STS10100S-XG-A
|
409Kb/6P |
TRENCH SCHOTTKY BARRIER DIODE
201807B |
|
STS10100S-XG-AR
|
409Kb/6P |
TRENCH SCHOTTKY BARRIER DIODE
201807B |
STMicroelectronics |
STS10DN3LH5
|
773Kb/13P |
Very low switching gate charge
May 2009 Rev 1 |
|
STS10N3LH5
|
778Kb/13P |
N-channel 30 V, 0.019 Ω, 10 A, SO-8 STripFET™V Power MOSFET
06-May-2009 |
VBsemi Electronics Co.,... |
STS10N3LH5
|
1,006Kb/9P |
N-Channel 20V (D-S) MOSFET
|
STMicroelectronics |
STS10NF30L
|
44Kb/6P |
N - CHANNEL 30V - 0.011ohm - 10A SO-8 STripFET POWER MOSFET
Jun-2000 |
|
STS10P3LLH6
|
380Kb/12P |
High avalanche ruggedness
11-Jun-2015 |
|
STS10P4LLF6
|
740Kb/14P |
P-channel 40 V, 0.0125 Ω typ., 10 A, StripFET™ F6 Power MOSFET in SO-8 package
December 2014 Rev 3 |
VBsemi Electronics Co.,... |
STS10P4LLF6
|
1,016Kb/9P |
P-Channel 40 V (D-S) MOSFET
|
STMicroelectronics |
STS10PF30L
|
199Kb/9P |
P-CHANNEL 30V - 0.012Ohm - 10A SO-8 STripFET II POWER MOSFET
|
VBsemi Electronics Co.,... |
STS10PF30L
|
996Kb/9P |
P-Channel 30-V (D-S) MOSFET
|
Stanson Technology |
STS10T06
|
174Kb/3P |
Reliable High Temperature Operation
|
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