STP6623 Folha de dados, PDF

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Stanson Technology	STP6621	452Kb/6P	STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP6625	813Kb/7P	P Channel Enhancement Mode MOSFET
	STP6635GH	502Kb/8P	P Channel Enhancement Mode MOSFET
VBsemi Electronics Co.,...	STP6635GH	1,023Kb/9P	P-Channel 30-V (D-S) MOSFET
Stanson Technology	STP601	398Kb/7P	P Channel Enhancement Mode MOSFET
Stanson Technology	STP601D	676Kb/7P	P Channel Enhancement Mode MOSFET
VBsemi Electronics Co.,...	STP601D	971Kb/7P	P-Channel 60 V (D-S) MOSFET
Stanson Technology	STP607D	1Mb/8P	P Channel Enhancement Mode MOSFET
SHENZHEN DOINGTER SEMIC...	STP60L60	1Mb/3P	N-Channel MOSFET uses advanced trench technology
SamHop Microelectronics...	STP60L60F	124Kb/7P	Super high dense cell design for low RDS(ON).
STMicroelectronics	STP60N043DM9	227Kb/12P	N-channel 600 V, 38 mΩ typ., 56 A MDmesh DM9 Power MOSFET in a TO-220 package 06-Sep-2022
STMicroelectronics	STP60N05-14	77Kb/5P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Mar-1996
Inchange Semiconductor ...	STP60N05-14	371Kb/2P	isc N-Channel MOSFET Transistor
STMicroelectronics	STP60N06	347Kb/10P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR May-1993
STMicroelectronics	STP60N06-14	77Kb/5P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Mar-1996
Inchange Semiconductor ...	STP60N06-14	318Kb/2P	Isc N-Channel MOSFET Transistor
STMicroelectronics	STP60N06FI	347Kb/10P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR May-1993
STMicroelectronics	STP60N3LH5	391Kb/16P	N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET??V Power MOSFET 20-Apr-2009
VBsemi Electronics Co.,...	STP60N3LH5	1Mb/10P	N-Channel 30 V (D-S) MOSFET
Inchange Semiconductor ...	STP60N3LH5	372Kb/2P	isc N-Channel MOSFET Transistor

STP6623 Folha de dados, PDF

STP6623 Datasheet ,PDF

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