| Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
Gulf Semiconductor |
RU2GE
|
79Kb/2P |
ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE竊?400V CURRENT竊?1.1A
|
|
RU2GG
|
107Kb/2P |
FULTRAFAST EFFICIENT GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.5A
|
Turck, Inc. |
RU200-CK40-2UN8X2T-H1151
|
967Kb/4P |
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023 |
|
RU200-CK40-2UP8X2T-H1151
|
967Kb/4P |
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023 |
|
RU200-CP40-2UN8X2T
|
1Mb/3P |
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023 |
|
RU200-CP40-2UN8X2T/S10
|
1Mb/3P |
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023 |
|
RU200-CP40-2UP8X2T
|
1Mb/3P |
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023 |
|
RU200-CP40-2UP8X2T/S10
|
1Mb/3P |
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023 |
|
RU200-CP40-LIU2N8X2T
|
1Mb/3P |
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023 |
|
RU200-CP40-LIU2N8X2T/S10
|
1Mb/3P |
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023 |
|
RU200-CP40-LIU2P8X2T
|
1Mb/3P |
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023 |
|
RU200-CP40-LIU2P8X2T/S10
|
1Mb/3P |
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023 |
Samsung semiconductor |
RU2012
|
4Mb/20P |
Passive components sales offices
|
Ruichips Semiconductor ... |
RU20120L
|
310Kb/8P |
N-Channel Advanced Power MOSFET
|
|
RU20130L
|
302Kb/9P |
N-Channel Advanced Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
RU20130L
|
928Kb/4P |
N-Channel MOSFET uses advanced trench technology
|
Ruichips Semiconductor ... |
RU2013H
|
274Kb/9P |
N-Channel Advanced Power MOSFET
|
VBsemi Electronics Co.,... |
RU2013HCGTR
|
1,006Kb/9P |
N-Channel 20V (D-S) MOSFET
|
Ruichips Semiconductor ... |
RU2020H
|
273Kb/9P |
N-Channel Advanced Power MOSFET
|
|
RU2021H
|
275Kb/9P |
N-Channel Advanced Power MOSFET
|
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