| Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
STMicroelectronics |
M28F512-10C1
|
523Kb/20P |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory
Aug-1998 |
|
M28F512-12B1
|
523Kb/20P |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory
Aug-1998 |
|
M28F512-12C1
|
523Kb/20P |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory
Aug-1998 |
Intel Corporation |
M28F008
|
401Kb/28P |
8 MBIT (1 MBIT x 8) FLASH MEMORY
|
Rochester Electronics |
M28F008
|
1Mb/14P |
8 MBIT (1 MBIT x 8) FLASH MEMORY Extended Cycllng Capablllty
|
Intel Corporation |
M28F010
|
317Kb/22P |
1024K (128K x 8) CMOS FLASH MEMORY
|
STMicroelectronics |
M28F101
|
197Kb/23P |
1 Mb 128K x 8, Chip Erase FLASH MEMORY
Apr-1997 |
|
M28F101-100K1
|
197Kb/23P |
1 Mb 128K x 8, Chip Erase FLASH MEMORY
Apr-1997 |
|
M28F101-100K3
|
197Kb/23P |
1 Mb 128K x 8, Chip Erase FLASH MEMORY
Apr-1997 |
|
M28F101-100K6
|
197Kb/23P |
1 Mb 128K x 8, Chip Erase FLASH MEMORY
Apr-1997 |
|
M28F101-100N1
|
197Kb/23P |
1 Mb 128K x 8, Chip Erase FLASH MEMORY
Apr-1997 |
|
M28F101-100N3
|
197Kb/23P |
1 Mb 128K x 8, Chip Erase FLASH MEMORY
Apr-1997 |
|
M28F101-100N6
|
197Kb/23P |
1 Mb 128K x 8, Chip Erase FLASH MEMORY
Apr-1997 |
|
M28F101-100P1
|
197Kb/23P |
1 Mb 128K x 8, Chip Erase FLASH MEMORY
Apr-1997 |
|
M28F101-100P3
|
197Kb/23P |
1 Mb 128K x 8, Chip Erase FLASH MEMORY
Apr-1997 |
|
M28F101-100P6
|
197Kb/23P |
1 Mb 128K x 8, Chip Erase FLASH MEMORY
Apr-1997 |
|
M28F101-100XK1
|
197Kb/23P |
1 Mb 128K x 8, Chip Erase FLASH MEMORY
Apr-1997 |
|
M28F101-100XK3
|
197Kb/23P |
1 Mb 128K x 8, Chip Erase FLASH MEMORY
Apr-1997 |
|
M28F101-100XK6
|
197Kb/23P |
1 Mb 128K x 8, Chip Erase FLASH MEMORY
Apr-1997 |
|
M28F101-100XN1
|
197Kb/23P |
1 Mb 128K x 8, Chip Erase FLASH MEMORY
Apr-1997 |
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