| Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
IXYS Corporation |
IXFR21N100Q
|
115Kb/4P |
HiPerFET Power MOSFETs ISOPLUS247
|
Inchange Semiconductor ... |
IXFR21N100
|
329Kb/2P |
isc N-Channel MOSFET Transistor
2023.10.8 |
|
IXFR200N10
|
329Kb/2P |
isc N-Channel MOSFET Transistor
2023.10.8 |
IXYS Corporation |
IXFR200N10P
|
561Kb/5P |
PolarTM HiPerFET Power MOSFET
|
|
IXFR200N10P
|
136Kb/6P |
Power MOSFET
|
|
IXFR200N10P
|
107Kb/5P |
Polar HiPerFET Power MOSFET
|
|
IXFR200N10P
|
136Kb/6P |
Power MOSFET
|
Inchange Semiconductor ... |
IXFR20N100
|
329Kb/2P |
isc N-Channel MOSFET Transistor
2023.10.8 |
IXYS Corporation |
IXFR20N100P
|
113Kb/4P |
Polar Power MOSFET HiPerFET
|
Inchange Semiconductor ... |
IXFR20N120
|
330Kb/2P |
isc N-Channel MOSFET Transistor
2023.10.8 |
IXYS Corporation |
IXFR20N120P
|
117Kb/4P |
Polar Power MOSFET HiPerFET
|
Inchange Semiconductor ... |
IXFR20N80
|
330Kb/2P |
isc N-Channel MOSFET Transistor
2023.10.8 |
IXYS Corporation |
IXFR20N80P
|
139Kb/4P |
PolarHV HiPerFET Power MOSFET
|
|
IXFR230N20T
|
197Kb/6P |
GigaMOS Power MOSFET
|
|
IXFR24N100
|
36Kb/2P |
HiPerFETTM Power MOSFETs ISOPLUS247TM(Electrically Isolated Back Surface)
|
Inchange Semiconductor ... |
IXFR24N100
|
330Kb/2P |
isc N-Channel MOSFET Transistor
2023.10.8 |
IXYS Corporation |
IXFR24N100Q3
|
148Kb/5P |
N-Channel Enhancement Mode Fast Intrinsic Rectifier
|
|
IXFR24N100
|
118Kb/4P |
HiPerFET Power MOSFET ISOPLUS247
|
|
IXFR24N50
|
34Kb/2P |
HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Back Surface)
|
Inchange Semiconductor ... |
IXFR24N50
|
330Kb/2P |
isc N-Channel MOSFET Transistor
2023.10.8 |
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