| Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
New Jersey Semi-Conduct... |
IRFF212
|
871Kb/2P |
RELD EFFECT POWER TRANSISTOR
|
|
IRFF213
|
871Kb/2P |
RELD EFFECT POWER TRANSISTOR
|
Intersil Corporation |
IRFF220
|
325Kb/7P |
3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET
March 1999 |
Seme LAB |
IRFF220
|
45Kb/2P |
N?밅HANNEL POWER MOSFET
|
New Jersey Semi-Conduct... |
IRFF220
|
80Kb/2P |
Absolute Maximum Ratings
|
Intersil Corporation |
IRFF230
|
327Kb/7P |
5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET
March 1999 |
Seme LAB |
IRFF230
|
42Kb/2P |
N-CHANNEL ENHANCEMENT
|
TT Electronics. |
IRFF230
|
296Kb/3P |
N-CHANNEL POWER MOSFET
|
International Rectifier |
IRFF024
|
132Kb/7P |
60V, N-CHANNEL
|
Seme LAB |
IRFF024
|
16Kb/1P |
N-Channel MOSFET in a Hermetically sealed TO39
|
|
IRFF034
|
15Kb/1P |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package
|
Intersil Corporation |
IRFF110
|
328Kb/7P |
3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET
March 1999 |
GE Solid State |
IRFF110
|
176Kb/5P |
Power MOS Field-Effect Transistors
|
Seme LAB |
IRFF110
|
16Kb/1P |
N-Channel MOSFET in a Hermetically sealed TO39
|
New Jersey Semi-Conduct... |
IRFF110
|
474Kb/2P |
IM-CHANIMEL POWER MOSFETs TO-39 PACKAGE
|
GE Solid State |
IRFF111
|
176Kb/5P |
Power MOS Field-Effect Transistors
|
New Jersey Semi-Conduct... |
IRFF111
|
474Kb/2P |
IM-CHANIMEL POWER MOSFETs TO-39 PACKAGE
|
GE Solid State |
IRFF112
|
176Kb/5P |
Power MOS Field-Effect Transistors
|
New Jersey Semi-Conduct... |
IRFF112
|
474Kb/2P |
IM-CHANIMEL POWER MOSFETs TO-39 PACKAGE
|
GE Solid State |
IRFF113
|
176Kb/5P |
Power MOS Field-Effect Transistors
|
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