| Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
Inchange Semiconductor ... |
GA100JT12
|
540Kb/4P |
isc N-Channel Transistor
2023-9-26 |
GeneSiC Semiconductor, ... |
GA100JT12-227
|
1Mb/12P |
OFF Silicon Carbide Junction Transistor
|
Inchange Semiconductor ... |
GA100JT12-ISCFM8004
|
365Kb/5P |
SiC MOSFET Power Module
2023-9-26 |
GeneSiC Semiconductor, ... |
GA100JT17-227
|
1Mb/12P |
OFF Silicon Carbide Junction Transistor
|
Inchange Semiconductor ... |
GA100JT17-ISCFM8005
|
365Kb/5P |
SiC MOSFET Power Module
2023-9-26 |
International Rectifier |
GA100NA60U
|
300Kb/10P |
INSULATED GATE BIPOLAR TRANSISTOR
|
Vishay Siliconix |
GA100NA60U
|
252Kb/10P |
Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A
22-Jul-10 |
|
GA100NA60UP
|
252Kb/10P |
Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A
22-Jul-10 |
GeneSiC Semiconductor, ... |
GA100SBJT12-FR4
|
533Kb/6P |
Double Pulse Test Board
|
|
GA100SICP12-227
|
258Kb/9P |
Transistor/Schottky Diode Co-pack
|
|
GA100SICP12-227
|
1Mb/13P |
Silicon Carbide Junction Transistor/Schottky Diode Co-pack
|
International Rectifier |
GA100TS120U
|
269Kb/10P |
HALF-BRIDGE IGBT INT-A-PAK
|
Vishay Siliconix |
GA100TS120UPBF
|
296Kb/10P |
"Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 100 A
04-May-10 |
International Rectifier |
GA100TS60SF
|
112Kb/7P |
Standard Speed IGBT
|
Vishay Siliconix |
GA100TS60SFPBF
|
133Kb/7P |
"Half-Bridge" IGBT INT-A-PAK (Standard Speed IGBT), 100 A
04-May-10 |
International Rectifier |
GA100TS60SQ
|
113Kb/7P |
HALF-BRIDGE IGBT INT-A-PAK Standard Speed IGBT
|
|
GA100TS60U
|
216Kb/10P |
HALF-BRIDGE" IGBT INT-A-PAK
|
|
GA100TS60U
|
216Kb/10P |
HALF-BRIDGE IGBT INT-A-PAK
|
Microsemi Corporation |
GA100
|
202Kb/4P |
SCRs Nuclear Radiation Resistant, Planar
|
|
GA101
|
202Kb/4P |
SCRs Nuclear Radiation Resistant, Planar
|
Portuguese ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Polish
Vietnamese
Indian
Mexican
British
New Zealand
