| Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
Central Semiconductor C... |
CJD31C
|
425Kb/2P |
SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS
|
|
CJD3055
|
542Kb/2P |
COMPLEMENTARY SILICON POWER TRANSISTOR
|
|
CJD3055
|
425Kb/2P |
SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS
|
|
CJD3055NPN
|
563Kb/2P |
silicon power transistors
|
Jiangsu Changjiang Elec... |
CJD30N10
|
578Kb/4P |
N-Channel Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
CJD30N10
|
1Mb/4P |
N-Channel MOSFET uses advanced trench technology
|
Central Semiconductor C... |
CJD32C
|
126Kb/2P |
COMPLEMENTARY SILICON POWER TRANSISTOR
|
|
CJD32C
|
425Kb/2P |
SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS
|
|
CJD340
|
453Kb/2P |
COMPLEMENTARY SILICON POWER TRANSISTOR
|
|
CJD340
|
424Kb/2P |
SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS
|
|
CJD340
|
424Kb/2P |
SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS
|
Continental Device Indi... |
CJD3439
|
573Kb/4P |
NPN SILICON PLASTIC HIGH VOLTAGE POWER TRANSISTORS
|
Central Semiconductor C... |
CJD350
|
453Kb/2P |
COMPLEMENTARY SILICON POWER TRANSISTOR
|
|
CJD350
|
424Kb/2P |
SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS
|
ZP Semiconductor |
CJD01N60
|
676Kb/3P |
Plastic-Encapsulate MOSFETS
|
|
CJD01N65B
|
750Kb/3P |
Plastic-Encapsulate MOSFETS
|
|
CJD01N80
|
710Kb/3P |
Plastic-Encapsulate MOSFETS
|
Jiangsu Changjiang Elec... |
CJD02N60
|
1Mb/4P |
N-Channel Power MOSFET
|
ZP Semiconductor |
CJD02N60-TO251-3L
|
664Kb/3P |
Plastic-Encapsulate MOSFETS
|
|
CJD02N60-TO251S
|
694Kb/3P |
Plastic-Encapsulate MOSFETS
|
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