| Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
 Analog Devices |
AD5669RBCBZ-1-R5
|
1Mb/30P |
Octal, 12-/16-Bit, I2C, denseDACs On-Chip Reference
6/2018-Rev. E to Rev. F |
 M-System Co.,Ltd. |
JC-CU-3-11-R5
|
343Kb/9P |
HUB MODULE
|
|
JC-CU-7-11-R5
|
343Kb/9P |
HUB MODULE
|
|
JC-HL-3-11-R5
|
445Kb/11P |
Remote I/O JC Series
|
|
JC-HL-7-11-R5
|
445Kb/11P |
Remote I/O JC Series
|
 WOLFSPEED, INC. |
PTRA082808NF-V1-R5
|
677Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 – 820 MHz
Rev. 06.2, 2022-1-27 |
|
PTRA083818NF-V1-R5
|
708Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 – 805 MHz
Rev. 06.2, 2022-1-27 |
|
PTRA084808NF-V1-R5
|
881Kb/12P |
Thermally-Enhanced High Power RF LDMOS FET 550 W, 48 V, 734 – 821 MHz
Rev. 03.4, 2022-1-27 |
|
PTRA084858NF-V1-R5
|
742Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 615 W, 48 V, 730 – 960 MHz
Rev. 03, 2023-07-07 |
|
PTRA093818NF-V1-R5
|
685Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 – 960 MHz
Rev. 06.2, 2022-01-04 |
|
PTRA094808NF-V1-R5
|
696Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 480 W, 48 V, 859 – 960 MHz
Rev. 05.2, 2022-01-04 |
|
PTRA094858NF-V1-R5
|
1Mb/9P |
Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 859 – 960 MHz
Rev. 04, 2023-06-28 |
|
PTVA084007NF-V1-R5
|
497Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 – 805 MHz
Rev. 04.2, 2022-02-13 |
|
PXAE261908NF-V1-R5
|
568Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 2515 – 2675 MHz
Rev. 04. 2023-7-24 |
 Qualwave Inc. All right... |
QWT1-R5
|
124Kb/1P |
Waveguide Termination
Rev 1.1 |
 Mini-Circuits |
TX1-R5
|
116Kb/1P |
RF Transformer TX1-R5
|