| Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
Cree, Inc |
GTRA262802FC-V2-R0
|
497Kb/9P
|
Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 ??2690 MHz
|
WOLFSPEED, INC. |
GTRA262802FC-V2-R0
|
515Kb/9P
|
Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz
Rev. 03.3, 2022-1-27
|
|
GTRA263902FC-V2-R0
|
531Kb/8P
|
Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 – 2690 MHz
Rev. 04.1, 2022-1-27
|
Cree, Inc |
GTVA212701FA-V2-R0
|
434Kb/8P
|
Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 ??2200 MHz
|
WOLFSPEED, INC. |
GTVA212701FA-V2-R0
|
566Kb/8P
|
Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz
Rev. 04.2, 2022-1-27
|
Cree, Inc |
GTVA262701FA-V2-R0
|
489Kb/8P
|
Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 ??2690 MHz
|
WOLFSPEED, INC. |
GTVA262701FA-V2-R0
|
506Kb/8P
|
Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz
Rev. 04.3, 2022-1-27
|
Cree, Inc |
GTVA262711FA-V2-R0
|
464Kb/9P
|
Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 ??2690 MHz
|
WOLFSPEED, INC. |
GTVA262711FA-V2-R0
|
594Kb/9P
|
Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 – 2690 MHz
Rev. 04.4, 2022-1-27
|
|
PTVA120251EA-V2-R0
|
787Kb/14P
|
Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz
Rev. 06, 2023-07-10
|
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