| Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
 Diodes Incorporated |
MMBF170
|
62Kb/2P
|
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS30104 Rev. C-2
|
 ON Semiconductor |
MMBF170
|
1Mb/16P
|
N-Channel Enhancement Mode Field Effect Transistor
March 2010 Rev. E2
|
 Fairchild Semiconductor |
MMBF170
|
75Kb/5P
|
N-Channel Enhancement Mode Field Effect Transistor
|
|
MMBF170
|
517Kb/13P
|
N-Channel Enhancement Mode Field Effect Transistor
|
 Unisonic Technologies |
MMBF170
|
140Kb/2P
|
0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
 SHIKUES Electronics |
MMBF170
|
873Kb/6P
|
N-Channel Enhancement Mode MOSFET
|
 Diodes Incorporated |
MMBF170-13-F
|
200Kb/5P
|
N-CHANNEL ENHANCEMENT MODE MOSFET
Rev 14
|
|
MMBF170-7-F
|
79Kb/4P
|
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS30104 Rev. 8 - 2
|
|
MMBF170-7-F
|
132Kb/3P
|
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS30105 Rev. 11 - 2
|
|
MMBF170-7-F
|
200Kb/5P
|
N-CHANNEL ENHANCEMENT MODE MOSFET
Rev 14
|
 Unisonic Technologies |
MMBF170G-AE2-R
|
140Kb/2P
|
0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
 ON Semiconductor |
MMBF170L
|
131Kb/5P
|
Power MOSFET
October, 2016 ??Rev. 10
|
 Unisonic Technologies |
MMBF170L-AE2-R
|
140Kb/2P
|
0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
 ON Semiconductor |
MMBF170LT1
|
61Kb/4P
|
Power MOSFET 500 mA, 60 V
February, 2004 ??Rev. 4
|
|
MMBF170LT1
|
82Kb/5P
|
Power MOSFET 500 mA, 60 V N-Channel SOT-23
April, 2008 - Rev. 6
|
 Motorola, Inc |
MMBF170LT1
|
98Kb/4P
|
TMOS FET Transistor
|
 ON Semiconductor |
MMBF170LT1G
|
61Kb/4P
|
Power MOSFET 500 mA, 60 V
February, 2004 ??Rev. 4
|
|
MMBF170LT1G
|
82Kb/5P
|
Power MOSFET 500 mA, 60 V N-Channel SOT-23
April, 2008 - Rev. 6
|
|
MMBF170LT1G
|
131Kb/5P
|
Power MOSFET
October, 2016 ??Rev. 10
|
 VBsemi Electronics Co.,... |
MMBF170LT1G
|
1Mb/8P
|
N-Channel 60-V (D-S) MOSFET
|