| Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
 Feinmetall GmbH |
H040CR-7.9
|
98Kb/1P
|
Basic Contact Probe
|
|
H040DR-7.9
|
97Kb/1P
|
Basic Contact Probe
|
|
H040LI-7.9S2
|
98Kb/1P
|
Basic Contact Probe
|
 Multicomp Pro |
H04C645V0U
|
278Kb/3P
|
ESD Protection Device
15/09/23 V1.0
|
 Hi-Sincerity Mocroelect... |
H04N60
|
60Kb/5P
|
N-Channel Power Field Effect Transistor
|
|
H04N60E
|
60Kb/5P
|
N-Channel Power Field Effect Transistor
|
|
H04N60F
|
60Kb/5P
|
N-Channel Power Field Effect Transistor
|
 Guangdong Huixin Electr... |
H04N80DC
|
371Kb/6P
|
800V N-Channel MOSFET
|
|
H04N80F
|
366Kb/6P
|
800V N-Channel MOSFET
|
|
H04N90T
|
719Kb/7P
|
900V N-Channel MOSFET
|
 Vishay Barry |
H04Z-0100J2T-00C36-X
|
553Kb/1P
|
Aluminum Nitride
09/19/06
|
|
H04Z-0200JT-00C36-X
|
559Kb/1P
|
Aluminum Nitride
09/19/06
|
|
H04Z-0300J2T-00C36-X
|
559Kb/1P
|
Aluminum Nitride
09/19/06
|
|
H04Z-0500J2T-00C36-X
|
193Kb/1P
|
Aluminum Nitride
Rev.A 9/18/07
|
|
H04Z-1000J2T-00C36-X
|
193Kb/1P
|
Aluminum Nitride
Rev.A 9/18/07
|
|
H04Z-2000J2T-00C36-X
|
193Kb/1P
|
Aluminum Nitride
Rev.A 09/18/07
|