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Fabricante Electrônico Nome de Peças Folha de dados Descrição Electrónicos Cree, Inc GTRA384802FC-V1-R2 1Mb/5P Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 ??3800 MHz WOLFSPEED, INC. GTRA384802FC-V1-R2 585Kb/9P Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz Rev. 03.1, 2022-1-27 Search Partnumber : Start with "GTRA384802FC-V1-R2" - Total : 20 ( 1/1 Page) Cree, Inc GTRA384802FC-V1-R0 1Mb/5P Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 ??3800 MHz WOLFSPEED, INC. GTRA384802FC-V1-R0 585Kb/9P Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz Rev. 03.1, 2022-1-27 GTRA384802FC-V1 585Kb/9P Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz Rev. 03.1, 2022-1-27 Cree, Inc GTRA384802FC 1Mb/5P Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 ??3800 MHz WOLFSPEED, INC. GTRA384802FC 585Kb/9P Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz Rev. 03.1, 2022-1-27 Cree, Inc GTRA360502M 250Kb/5P Thermally-Enhanced High Power RF GaN on SiC HEMT WOLFSPEED, INC. GTRA360502M 844Kb/9P Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Rev. 04, 2023-06-27 GTRA360502M-V1 844Kb/9P Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Rev. 04, 2023-06-27 GTRA360502M-V1-R3K 844Kb/9P Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Rev. 04, 2023-06-27 Cree, Inc GTRA362002FC 233Kb/5P Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 ??3600 MHz WOLFSPEED, INC. GTRA362002FC 435Kb/8P Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz Rev. 06, 2023-06-23 GTRA362002FC-V1 435Kb/8P Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz Rev. 06, 2023-06-23 GTRA362002FC-V1-R0 435Kb/8P Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz Rev. 06, 2023-06-23 GTRA362002FC-V1-R2 435Kb/8P Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz Rev. 06, 2023-06-23 Cree, Inc GTRA362802FC 282Kb/5P Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 ??3600 MHz WOLFSPEED, INC. GTRA362802FC 553Kb/8P Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz Rev. 04.3, 2022-1-27 GTRA362802FC-V1 553Kb/8P Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz Rev. 04.3, 2022-1-27 GTRA362802FC-V1-R0 553Kb/8P Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz Rev. 04.3, 2022-1-27

GTRA384802FC-V1-R2 Folha de dados, PDF [Revenda]

Revenda Nome de Peças Fabricante Electrônico Folha de dados Descrição Electrónicos Buy Now Element14 GTR0.5-8 JST / JAPAN SOLDERLESS TERMINALS FERRULE, INSULATED, DE, 0.5MMSQ., PK100; Wire Ferrule Type:Single Wire; Wire Size AWG Max:20AWG; Con... GTR1.0-8 JST / JAPAN SOLDERLESS TERMINALS FERRULE, INSULATED, DE, 1MMSQ., PK100; Wire Ferrule Type:Single Wire; Wire Size AWG Max:18AWG; Condu...

GTRA384802FC-V1-R2 Revenda