| Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
OSRAM GmbH |
F2000D
|
212Kb/6P
|
InGaAlP-High Brightness-Lumineszenzdiode (617nm, High Current and Flux), InGaAlP High Brightness LED (617nm, High Current and Flux)
|
MicroPower Direct, LLC |
F2000ERW
|
225Kb/2P
|
Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters
|
|
F2000ERW
|
217Kb/2P
|
F2000ERW SERIES
|
Polyfet RF Devices |
F2001
|
37Kb/2P
|
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?
|
MicroPower Direct, LLC |
F2001ERW
|
225Kb/2P
|
Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters
|
|
F2001ERW
|
217Kb/2P
|
F2000ERW SERIES
|
Polyfet RF Devices |
F2002
|
37Kb/2P
|
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?
|
MicroPower Direct, LLC |
F2002ERW
|
225Kb/2P
|
Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters
|
|
F2002ERW
|
217Kb/2P
|
F2000ERW SERIES
|
Polyfet RF Devices |
F2003
|
37Kb/2P
|
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?
|
MicroPower Direct, LLC |
F2003ERW
|
225Kb/2P
|
Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters
|
|
F2003ERW
|
217Kb/2P
|
F2000ERW SERIES
|
Polyfet RF Devices |
F2004
|
37Kb/2P
|
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
MicroPower Direct, LLC |
F2004ERW
|
225Kb/2P
|
Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters
|
|
F2004ERW
|
217Kb/2P
|
F2000ERW SERIES
|
|
F2005ERW
|
225Kb/2P
|
Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters
|
|
F2005ERW
|
217Kb/2P
|
F2000ERW SERIES
|
|
F2006ERW
|
225Kb/2P
|
Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters
|
|
F2006ERW
|
217Kb/2P
|
F2000ERW SERIES
|
|
F2007ERW
|
225Kb/2P
|
Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters
|
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