| Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
 Intersil Corporation |
HGTH12N50C1
|
38Kb/7P
|
10A, 12A, 400V and 500V N-Channel IGBTs
April 1995
|
 Inchange Semiconductor ... |
ISPP12N50C3
|
339Kb/2P
|
N-Channel MOSFET Transistor
|
|
ISPP12N50C3
|
339Kb/2P
|
N-Channel MOSFET Transistor
|
|
ISPW12N50C3
|
334Kb/2P
|
isc N-Channel MOSFET Transistor
|
 JILIN SINO-MICROELECTRO... |
JCS12N50CC-O-C-N-B
|
1Mb/11P
|
Low gate charge
|
 Vishay Siliconix |
SIHB12N50C-E3
|
153Kb/8P
|
100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC
26-Apr-10
|
|
SIHB12N50C-E3
|
274Kb/13P
|
Power MOSFET
26-Apr-10
|
|
SIHB12N50C-E3
|
328Kb/10P
|
Power MOSFETs
26-Apr-10
|
 VBsemi Electronics Co.,... |
SIHB12N50C-E3
|
1Mb/8P
|
N-Channel 650 V (D-S) MOSFET
|
 Vishay Siliconix |
SIHF12N50C-E3
|
153Kb/8P
|
100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC
26-Apr-10
|
|
SIHF12N50C-E3
|
274Kb/13P
|
Power MOSFET
26-Apr-10
|
|
SIHF12N50C-E3
|
328Kb/10P
|
Power MOSFETs
26-Apr-10
|
|
SIHF12N50C
|
274Kb/13P
|
Power MOSFET
26-Apr-10
|
|
SIHP12N50C-E3
|
274Kb/13P
|
Power MOSFET
26-Apr-10
|
|
SIHP12N50C-E3
|
328Kb/10P
|
Power MOSFETs
26-Apr-10
|
|
SIHP12N50C
|
274Kb/13P
|
Power MOSFET
26-Apr-10
|
 Infineon Technologies A... |
SPA12N50C3
|
644Kb/14P
|
Cool MOS??Power Transistor Feature New revolutionary high voltage technology
Rev. 3.1 2009-11-30
|
|
SPA12N50C3
|
1Mb/14P
|
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
Rev. 3.0 2007-08-30
|
|
SPA12N50C3
|
365Kb/13P
|
Cool MOS??Power Transistor
Rev. 2.1 2004-03-29
|
 Inchange Semiconductor ... |
SPA12N50C3
|
267Kb/2P
|
Isc N-Channel MOSFET Transistor
|